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一种新型片内CMOS集成温度传感器的设计 被引量：1

Design of novel built-in CMOS temperature sensor
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摘要 设计一种与CMOS工艺完全兼容的集成温度传感器,依据阈值电压和载流子迁移率随温度的变化关系,将阈值电压差微小变化转换成频率,输出数字型温度检测结果,电路结构简单、能够自启动。用Spectre对其性能进行仿真分析,结果表明:该传感器具有线性好、灵敏度高,并易于和片上系统一次性集成等特点。 A novel buih-in CMOS temperature sensor is designed. Threshold voltage can be changed into digital- output thiough utilizing the variety between the threshold vnhage of a MOS transistor and camier mobility t,s temperature. The Circuit is simple and can turn on by self. The simulation result by Spectre shows the circuit has many advantages,such as good linearity,higher sensitivity and integration with SOC on one chip.
作者 曹新亮 余宁梅 李华东
机构地区 西安理工大学自动化学院 延安大学物理与电子信息学院
出处 《传感器与微系统》 CSCD 北大核心 2008年第9期103-105,共3页 Transducer and Microsystem Technologies
关键词 温度传感器 集成电路 阈值电压 载流子迁移率 频率 temperature sensor integrated circuits threshold voltage carrier mobility frequency
分类号 TN47 [电子电信—微电子学与固体电子学]
  • 相关文献

参考文献9

  • 1Rasmussen W. Sensor technology and devices[ M]. Boston, Artech House,1994.
  • 2Bakker A, Huijsing J H. Micropower CMOS temperature sensor with digital output [ J ]. IEEE J Solid-State Circuits, 1996,31(7) :933.
  • 3Pertijs M, Niederkorn A, Ma X, el al. A CMOS temperature sensor with a 3σ, inaccuracy of +0.5℃ from-50℃to 120℃[J]. IEEE International Solid-Stale. Circuits Conference (ISSCC), 2003( 1 ) :200.
  • 4Ferro M ,Salerno F,Castello R. A floating CMOS bandgap voltage reference for differential applications[ J]. IEEE J Solid-Stare Circuits,1983 (18) :273.
  • 5Bianehi R A. Karate J M, Courtois B, et al. CMOS-compatible temperature sensor with digital output for wide temperature range applications [ J ]. Microelectrunics Journal,2000 ( 31 ) :803.
  • 6Shaukatullah H. A method of using thermal test chips with diodes for thermal characterization of electronic packages without calibration [ C ]// Semiconductor Thermal Measurement and Management Symposium, Eleventh Annual IEEE Volume, 1995:83 - 86.
  • 7Wang Nailong, Zhang Sheng, Zhou Runde. A novel built-in CMOS temperature sensor for VLSI circuits[ J ]. Chinese Journal of Semieonduetors,2004 (3) :252 -255
  • 8林赛华,杨华中.新型全CMOS片上温度传感器设计[J].Journal of Semiconductors,2006,27(3):551-555. 被引量：9
  • 9张洵,王鹏,靳东明.一种新型的CMOS温度传感器[J].Journal of Semiconductors,2005,26(11):2202-2207. 被引量：7

二级参考文献23

  • 1Rasmussen W.Sensor technology and devices.Boston:Artech House,1994.
  • 2Bakker A, Huijsing J H. Micropower CMOS temperature sensor with digital output. IEEE J Solid-State Circuits, 1996,31(7):933.
  • 3Pertiis M, Niederkorn A, Ma X, et al. A CMOS temperature sensor with a 3σ inaccuracy of ± 0.5℃ from-50℃ to 120℃. 2003 IEEE International Solid-State Circuits Conference (ISSCC), 2003,1: 200.
  • 4Ferro M, Salerno F, Castello R. A floating CMOS bandgap voltage reference for differential applications. IEEE J Solid-State Circuits, 1983 ,SC-18: 273.
  • 5Bianchi R A, Karam J M,Courtois B, et al. CMOS-compatible temperature sensor with digital output for wide temperature range applications. Microelectronics Journal, 2000,31: 803.
  • 6Miribel-Catald P,Montane E,Bota S A,et al. MOSFET-based temperature sensor for standard BCD smart power technology. Microelectronics Journal, 2001,32: 869.
  • 7Middelhoek S, Audet S A. Silicon sensors. New York: Academic, 1989.
  • 8Kolling A, Bak F, Bergveld P, et al. Design of a CMOS temperature sensor with current output. Sensors and Actuators A,1990,A21-A23:645.
  • 9Tsividis Y P. Operation and modeling of the MOS transistor.New York:McGraw-Hill, 1987.
  • 10Laker K R, Sansen W M C. Design of analog integrated circuits and systems. New York.. McGraw-Hill, 1994.

共引文献11

同被引文献11

  • 1张洵,王鹏,靳东明.一种新型的CMOS温度传感器[J].Journal of Semiconductors,2005,26(11):2202-2207. 被引量：7
  • 2林赛华,杨华中.新型全CMOS片上温度传感器设计[J].Journal of Semiconductors,2006,27(3):551-555. 被引量：9
  • 3Bakker A, Huijsing J H. Micropower CMOS Temperature Sensor with Digital Output[ J]. IEEE J Solid-State Circuits, 1996, 31 (7) : 933 -937.
  • 4Pertijs M, Makinwa K, Huijsing H. A CMOS Smart Temperature Sensor with a 3σ Inaccuracy of + 0.1℃ from -55℃ to 125℃ [ J ]. IEEE J. Solid-State Circuits, 2005,40(12) : 2805 -2815.
  • 5Ferro M, Salerno F, Castello R. A Floating CMOS Bandgap Voltage Reference for Differential Applications[ J]. IEEE J Solid-Stare Circuits, 1989, 24(3) : 690 -697.
  • 6Bianehi R A, Karate J M, Courtois B, et al. CMOS-Compatible Temperature Sensor with Digital Output for Wide Temperature Range Applications[J]. Microelectronics Journal, 2000, 31:803 -810.
  • 7Shaukatullah H. A Method of Using Thermal Test Chips With Diodes for Thermal Characterization of Electronic Packages without calibration [ C ]//Semiconductor Thermal Measurement and Management Symposium, Eleventh Annual IEEE Volume, 1995,7 -9 Feb: 83-86.
  • 8Wang Nailong, Zhang Sheng, Zhou Runde. A Novel Built-in CMOS Temperature Sensor for VLSI Circuits[ J]. Chinese Journal of Semiconductors. 2004, 3 : 252 - 255.
  • 9彭婧,张顺平,李华曜,谢长生.MOS气敏传感器阵列优化与工作温度选择[J].传感技术学报,2008,21(6):903-907. 被引量：3
  • 10汪家奇,唐祯安.一种与CMOS工艺兼容的钨微热板[J].传感技术学报,2009,22(1):42-44. 被引量：5

引证文献1

二级引证文献7

传感器与微系统
2008年 第9期

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