摘要
ＭＯＣＶＤ用高压汞灯对ｎ－ＧａＮ处延层进行了辐照湿法化学刻蚀研究，这种外延层是在Ａ１２Ｏ３衬底上用ＭＯＣＶＤ方法生长的。结果表明：在紫外光照下，ｎ－ＧａＮ层在２５％的ＫＯＨ水溶液中腐蚀较有效。这种腐蚀很可能是通过紫外光增强氧化和还原反应而产生的。
A wet chemical etching method of n-GaN epitaxial layer grown on a sapphire substrate by MOCVD is investigated using UV of high pressure mercury lamp.It is shown that n-GaN layer can be etched in 25% KOH dilute.The etching may take place through the enhanced oxidation and reduction reactions by UV.
出处
《南昌大学学报（理科版）》
CAS
1997年第3期259-262,共4页
Journal of Nanchang University(Natural Science)
