摘要
提出了一种用于MEMS的硅基SiC微通道(阵列)及其制备方法,它涉及半导体工艺加工硅晶片和化学气相淀积方法制备SiC。在Si(100)衬底上用半导体工艺刻蚀出凹槽微结构,凹槽之间留出台面,凹槽和台面的几何尺寸(深度、宽度、长度)及其分布方式根据需要而定,此凹槽微结构用作制备SiC微通道的模板;用化学气相淀积方法在模板上制备一厚层SiC材料,此层SiC不仅完全覆盖衬底表面的微结构包括凹槽和台面,还在凹槽顶部形成封闭结构,这样就在衬底上形成了以凹槽为模板的SiC微通道(阵列)。对淀积速率与微通道质量之间的关系进行初步分析,发现单纯地提高淀积速率不利于获得高质量的微通道。
A silicon-based SiC micro-fluidic channels and its preparation method were introduced, which involes the silicon-based semiconductor process and SiC preparation by chemical vapor deposition （CVD）. The grooves with different geometric dimensions （depth, width and length） and distributions were etched on a silicon substrate by anisotropic inductively coupled plasma （ICP）, and the grooves were used for the template of SiC micro-fluidic channel. A thick layer of SiC materials was deposited on the silicon template by CVD. In an optimized SiC deposition process, clamped structure was formed on the top of the groove, and created a sealing SiC cavity underneath, which can act as micro-channels for micro fluidic system applications. With an analysis of the relationship between the deposition rate and micro-channel equality made, and the result shows that the increasing deposition rate merely goes against getting high quality micro-channel.
出处
《微纳电子技术》
CAS
2008年第8期458-461,共4页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(60406010)
国家863高技术研究发展计划资助项目(2006AA04Z339)
关键词
微流体
微通道
碳化硅
化学气相沉积
模板
单体
microfluidic
microchannels
SiC
CVD （chemical vapor deposition）
template
monomer
