摘要
研究了InGaAs/InP PIN探测器中扩散结深对光响应度的影响,对不同扩散条件下的光电探测器进行了对比实验,测量了不同结深下器件的I-V特性和光响应度。结果表明:扩散结深对器件的I-V特性影响不大,而对光响应度影响很大,当结深处在InGaAs吸收层上表面时,光响应度最大值出现在波长1.55μm处;而当结深进入衬底InP层后,光响应度最大值则出现在波长1μm处。另外,在闭管扩散实验中,严格控制温度和扩散时间是控制结深的关键,研究了不同扩散温度和扩散时间下的结深,为器件的制备提供了参考。
The effect of junction depth on responsivity in InGaAs/InP detectors was studied. The contrast experiment for PIN detector under different diffusive conditions was carried on, and the device I-V characteristics and photo responsivity under different junction depths were measured. The result shows that the junction depths have little influence on device I-V characteristics, however, it has great influence on photo responsivity. When the junction forms on the upper surface of InGaAs absorbing layer, the photo responsivity has the maximum value at 1.55 um; While the junction enter InP substrate, the maximum photo responsivity appears at 1 um. In addition, in sealed tube diffusion experiment, strict control temperature and diffusion time are the key to control the junction depths, the junction depths under different temperatures and diffusion time are studied, these offer important reference to device fabrication.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第10期855-858,共4页
Semiconductor Technology
基金
北京市自然科学基金资助项目(21002015200501)
教育部出国留学人员基金资助项目(63002015200401)
