摘要
本文对比分析了运放型、交叉耦合型和锁存器型灵敏放大器三种不同的SRAM灵敏放大器的基本结构并通过仿真比较了它们的优缺点,在此基础上设计了读出放大时间在最坏情况下需0.5ns,静态维持功耗约为0.1mW的SRAM灵敏放大器。
Basic structure of operational amplifier-type, cross coupled-type, latch-type three different SRAM sense amplifier are analyzed and Advantages and disadvantages are compared by simulation. SRAM sense amplifier with 0. 1 mW static power consumption is designed and its read-out time is 0. 5 ns at the worst case.
出处
《电子器件》
CAS
2008年第5期1650-1653,共4页
Chinese Journal of Electron Devices
基金
南阳师范学院高层次人才科研启动费资助
