摘要
采用传统的高温固相反应合成了基质掺杂的Cd(RE1Si)O3:Sm3(+RE=Al,Ga,V,Mo,Zr,Ti,W)长余辉发光材料。用荧光光谱仪研究了对CdSiO3:Sm3+体系进行不同离子的掺杂所得样品的光谱性质。对离子掺杂影响产物性能的研究表明,掺杂离子电荷是主要的影响因素,具有较高电荷的Mo、W的掺杂对产物的余辉时间具有明显的增强作用,其余辉时间分别达到453s和924s。
CdSiO3：Sm^3＋ long afterglow red phosphors host doping with Zr, Ti or W etc. were synthesized through the high temperature solid-state method. The photo luminescence spectra of sample was investigated by the spectra fluorescence. The result shows the valence state of doping ions is the leading factor for CdSiO3：Sm^3＋ luminescence and long-lasting properties. The ions with high valence state such as Mo, W can improve sample＇s long-lasting properties. Their afterglow times are up to 453 s and 924 s.
出处
《安徽化工》
CAS
2008年第5期19-21,共3页
Anhui Chemical Industry
关键词
硅酸镉
基质掺杂
长余辉
Cadmium silicate
host doping
long-lasting properties
