摘要
采用溶胶-凝胶工艺在玻璃衬底上制备了Zn1-xMgxO(x=0.1,0.2,0.3,0.4,0.5,0.6,0.7)薄膜.X射线衍射谱(XRD)测试结果发现,在0.1<x<0.3范围内,薄膜仍然保持氧化锌六角纤锌矿结构,(002)面衍射峰位向大角度方向移动,超过0.3时出现氧化镁立方相.对镁含量为0.1,0.2,0.3薄膜的光致发光谱研究表明:紫外发光峰随镁含量的增加向短波方向移动.对于Zn0.9Mg0.1O薄膜,在5,5.5和6℃/min的升温速率下,升温速率越快结晶程度越好.在相同升温速率下,随着退火温度从500℃升高到560℃,样品的结晶程度变好,当退火温度达到590℃时,结晶质量下降.
The MgxZn1-x O（x = 0.1,0.2,0.3, 0.d, 0.5,0.6 and 0.7）thin films were prepared on glass substrate by the Sol-Gel method. The X-ray diffraction results show that when the value of x is between 0.1 and 0.3, the thin film has the structure of hexagonal wurtzite while the angle of diffraction peak becomes bigger with increasing x, and the MgO impurity phase segregates at x = 0.4. The ultraviolet photoluminescence spectra of the films show ultraviolet emission peak at room temperature, which has an increasing blue shift with the increasing content of Mg. The band gap of ZnO broadens with Mg-doping concentration increasing from 0.1 to 0.3. For the sample with x = 0.1 annealed at 500 ℃, the crystal quality of the films is improved with the increase of the rate of temperature rise from 4.5℃/min to 6.0℃/min. For the sample with x = 0.2, the crystal quality of the films is improved with the increase in annealing temperature from 500℃ to 560℃ . With the annealing temperature increasing above 590 ℃ the crystal quality of the films degenerates.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第10期6614-6619,共6页
Acta Physica Sinica
关键词
氧化锌
结构
禁带宽度
光致发光谱
ZnO films, structure, band gap, photoluminescence
