摘要
Recent advances in quantum dots （QDs） for classical and non-classical light sources are presented. We have established metal organic chemical vapor deposition （MOCVD） technology for InAs-based QD lasers at 1.3 μm and achieved ultralow threshold in QD lasers with photonic crystal （PhC） nanocavity. In addition, single photon emitters at 1.55 μm, GaN-based single photon sources operating at 200 K, and high-Q PhC nanocavity have been demonstrated.
Recent advances in quantum dots （QDs） for classical and non-classical light sources are presented. We have established metal organic chemical vapor deposition （MOCVD） technology for InAs-based QD lasers at 1.3 μm and achieved ultralow threshold in QD lasers with photonic crystal （PhC） nanocavity. In addition, single photon emitters at 1.55 μm, GaN-based single photon sources operating at 200 K, and high-Q PhC nanocavity have been demonstrated.
基金
Special Coordination Funds for Promoting Science and Technology
