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ZnO纳米线及其器件研究进展 被引量:5

Progress in ZnO Nanowire and Nanodevice
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摘要 介绍了氧化锌(ZnO)纳米线(NW)的性质,总结了ZnONW的气相法、液相法、模板生长法、自组装法等制备原理和方法,详细阐述了ZnONW基光电、压敏和气敏等纳米器件的研究现状,如在发光二极管、太阳能电池、紫外激光器、纳米发电机、气敏传感器的应用现状。分析了目前ZnONW器件实用化进程中难以解决的p型掺杂等方面的问题及其在荧光探针、稀磁半导体材料和自旋电子器件等方面的研究和应用趋势,指出今后的研究及发展方向主要将集中在ZnO缺陷形成及作用机理的研究,ZnONW荧光探针的制备及其在生物医学上的应用,不同结构的ZnO超晶格和多量子阱的制备及其在自旋电子器件中的应用。 The properties of ZnO nanowire (NW) are introduced, and the principles and methods of preparing ZnO nanowires are reviewed, including vapor method, liquid method, template growth method, self-assemble method and so on. The statues of optoelectronic devices, pressure-sensitive devices and gas-sensitive devices based ZnO NW are described in detail, such as light-emitting diode (LED), solar cell, ultraviolet laser, nanogenerator and gas sensor. The difficulties resolved in practical application of ZnO NW devices, such as doped p-type ZnO, are analyzed. The tendencies of fluorescent probe, diluted magnetic semiconductor materials and quantum spin devices based ZnO NW are forecasted. It is indicated that the following researches will be focused on the defect formation and function mechanism of ZnO, preparation and application of ZnO NW fluorescent probe, research of ZnO NW superlattice and quantum well with different structures and its applications in quantum spin devices.
出处 《微纳电子技术》 CAS 2008年第10期590-596,600,共8页 Micronanoelectronic Technology
基金 上海市教委重点科研项目(078813)
关键词 氧化锌纳米线 纳米器件 光电器件 压敏器件 气敏器件 znic oxide nanowire (ZnO NW) nanodevice optoelectronic device pressure-sensitive device gas-sensitive device
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  • 1YAMAMOTO K, NAGASAWA K, OHMORI T. Preparation and characterization of ZnO nanowires [J].Physical: E, 2004, 24 (1-2): 129-132.
  • 2CHEN Y J, CHI B, ZHANG H Z, et al. Controlled growth of zinc nanowires [J]. Materials Letters, 2007, 61 (1) : 144- 147.
  • 3SEO B I, SHAISLAMOV A, HA M H, et al. ZnO nanotubes by template wetting process [J]. Physcia Low Dimensional Sys terns & Nanostructures: E, 2007, 37 (1-2): 241-244.
  • 4SUN Y, RILEY D J, ASHFOLD M. Mechanism of ZnO nanotube growth by hydrothermal methods on ZnO film-coa ted Si substrates[J]. Journal of Physical Chemistry: B 2006, 110 (31): 15186-15192.
  • 5HIRATE T. SASAKI S, LI W C, et al. Effects of laser-ablated impurity on aligned ZnO nanorods grown by chemical vapor deposition [J]. Thin Solid Films, 2005, 487 (1 -2): 35-39.
  • 6CHEN Y X, LEWIS M, ZHOU W L. ZnO nanostructures fabricated through a double-tube vapor-phase transport synthesis [J].Journal of Crystal Growth, 2005, 282 (1 - 2) : 85 - 93.
  • 7WANG Z L. Nanostructures of zinc oxide [J].Materialstaday, 2004, 7 (6): 26-33.
  • 8KONENKAMP R, WORD R C, SCHLEGEL C. Vertical nanowire light-emitting diode [J]. Applied Physical Letters, 2004, 85 (24) : 6004- 6006.
  • 9JEONG M C, OH B Y, HAM M H, et al. ZnO nanowire inserted GaN/ZnO heterojunction light-emitting diodes [J].Small, 2007, 3 (4): 568-572.
  • 10JEONG M C, OH B Y, HAM M H, et al. Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p- GaN film heterojunction light-emitting diodes [J]. Applied Physical Letters, 2006, 88 (20) : 2021051- 2021053.

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