摘要
该文提出了多晶硅薄膜晶体管的一种Halo LDD新结构，Halo LDD结构能够有效地抑制短沟道效应，合理的Halo区掺杂分布会极大地改善小尺寸器件性能。文中采用工艺模拟软件Tsuprem4和器件模拟软件Medici研究模拟了Halo结构的工艺参数对器件性能的影响，并进行优化。分析表明，Halo注入角度、能量和剂量的增大会提高器件的阂值电压和开关比，降低泄漏电流和阀值漂移，有效的抑制热栽流子效应；但也会部分地降低驱动能力，因此，要综合考虑，根据具体的条件，得到Halo结构最佳的工艺参数。
A new device structure of polysilicon thin film transistor, Halo LDD P-Si TFT, has been proposed.The Halo structure device can restrain the SCE effectively, and improve the device performance greatly with good doping distribution in the Halo region.In this paper,influence of Halo process parameter on device performance is researched and optimized with Tsupreru4 and Medici.It is found that higher tilt angle,energy and dosage gives increased threshold voltage and ration of Ion to Ioff, and also reduced leakage current and threshold voltage shift,but reduce drive current. Thus, before the best process parameter for Halo structure is abtained, every factors should be taken into account according to the specific condition.
作者
刘小红
顾晓峰
LIU Xiao-hong,GU Xiao-feng （School of Information Technology,Jiangnan University,Wuxi 214122, China）
出处
《电脑知识与技术》
2008年第10期211-212,233,共3页
Computer Knowledge and Technology
基金
基金项目：江苏省自然科学基金项目（BK2007026）,教育部新世纪优秀人才支持计划（NCET-06-0484）
