期刊文献+

高密度封装二极管激光器阵列 被引量:2

High density packaging diode laser
下载PDF
导出
摘要 理论模拟了自制的高效冷却器的散热能力.分析了单元封装结构所需材料的导热特性,获得了高功率二极管激光器在高功率密度、高占空比条件下运行的可行性。改进了高密度封装的关键工艺,热沉金属化层达到了3~5μm,焊料厚度为4~7μm,封装间距0.6mm,采用峰值功率1kW的背冷式叠阵二极管激光器。实验测试结果表明:封装的二极管激光器叠阵单元的整体封装热阻为0.115℃/W.有良好的散热能力;该叠阵模块在电流为100A、占空比15%时,输出峰值功率为986W,峰值功率密度达到1.5kW/cm^2,平均每个板条的斜效率为1.25W/A,激光器阈值电流为20A左右。 The heat dispersion of a cooler which we made was theoretically simulated and the thermal conductivity of the packaging material was analyzed. It was proved the diode laser could operate in high power density and high duty cycle. The key technique for high density packaging was improved. The thickness of the gilded heat sink was 3- μm, and that of the solder was 4- 7μm. The thermal resistance of the packaged I.D bar was 0. 115 ℃/W. The output power of the diode laser arrays was 986 W when the current was 100 A and the duty cycle 15%. The slope efficiency of each bar was 1.25 W/A and the current threshold was about 20 A. The peak power density could be as high as 1.5 kW/cm^2 when the duty-cycle was 15%.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2008年第9期1426-1430,共5页 High Power Laser and Particle Beams
基金 中国工程物理研究院基金资助课题(2007A10001)
关键词 二极管激光器 高密度封装 背冷式叠阵 热沉 热阻 Diode laser High density packaging Passive cooling stack Heat sink Thermal resistance
  • 相关文献

参考文献11

二级参考文献51

  • 1欧群飞,陈建国,冯国英,张申金,朱海波,李明中,唐军,罗亦鸣,邓青华,王建军.环形激光二极管抽运棒状激光器中瞬态温度和热应力分析[J].光学学报,2004,24(6):803-807. 被引量:22
  • 2姚震宇,吕百达,蒋建锋,涂波,唐淳,武德勇,童立新,周唐建.激光二极管抽运Nd:YAG双薄片激光器[J].中国激光,2005,32(4):457-460. 被引量:11
  • 3Rajan Bhatia. Materials issues and engineering design considerations for device packaging of high power edge emitting semiconductor laser arrays and monolithic stacked laser diode bars. Technical Report, 2003
  • 4Endriz J G, Vakili M, Browder G S et al.. High power diode laser arrays. IEEE Journal of quantum electronics, 1992,28(4):952~965
  • 5Bezotosnyi V V, Kov K K. Modelling of the thermal parameters of high power linear laser-diode arrays:Two-dimensional transient model. Quantum Electronics, 1998, 28(3):217~220
  • 6Mei Z, Hua F, Glazer J. Low Temperature Soldering. IEEE KPMT Int'l Electronics Manufacturing Technology Symposium,1997,463~476
  • 7Chu K M, Lee J S, Cho H S et al.. A fluxless flip chip bonding for VCSEL arrays using silver coated indium solders bumps.International IEEE Conference On A isan Green Electronics( AGEC),2004,110~116
  • 8Chuang R W, Kim D K, Lee C C. A Fluxless Process of Producing Tin-Rich Gold-Tin Joints in Air. IEEE Transactions on Components and Packaging technologies, 2004,27(1):177~181
  • 9Weir S, Bader V, Azdasht G et al.. Fluxless Die Bonding of High Power Laser Bars using the AuSn-Metallurgy. Electronic Components and Technology Conference, 1997, 780~787
  • 10Kuhmann J F, Preuss A, Addphi B et al.. Oxidation and Reduction Kinetics of Eutectic SnPb, InSn and AuSn: A Knowledge Base for Fluxless Solder Bonding Applications. Electronic Components and Technology Conference, 1997,120~126

共引文献69

同被引文献16

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部