摘要
采用射频磁控溅射技术和复合靶材方法制备了掺Mn,掺Co和Co、Mn共掺的SiC薄膜,经高温退火后进行了光致发光(PL)谱的测量,还用X射线衍射(XRD),傅立叶变换红外光谱(FTIR),扫描电镜(SEM)等表征手段分析了薄膜的相结构和表面形貌,并与光致发光的结果进行了对比研究。结果表明,掺Mn、Co使SiC晶格发生畸变,X射线衍射峰强度下降,Si-C吸收谱变宽,Si—C键振动减弱,Si-O基团的振动增强。样品在室温条件下均呈现出强的紫光发射特性,发光峰均位于414nm(3.0eV),认为414nm处的光致发光峰对应于光激发产生的电子从导带底到Si空位浅受主能级之间的辐射跃迁,其强度取决于Si空位的浓度。
SiC film doped with manganese （Mn） or cobalt （Co） and co-doped with Mn and Co were prepared by the RF-magnetron sputtering. The as-deposited films were annealed in the temperature of 1050℃ under argon ambient. The thin films were characterized by X-ray diffraction （XRD）, Fourier transform infrared spectroscopy （FTIR）, scanning electron microscopy （SEM）, and Photoluminescence （PL）. The results showed that Mn or Co doping leads to a decrease of XRD peak of SiC film due to the lattice distortion and to a broadening of SiC absorption band, a weakening of Si-C vibration related peak, and an enhancing of Si-O group peak. Meanwhile, a more intensive near band photoluminescence emission （414nm）, which was approximately 1.3 times higher in intensity,was observed at room temperature in Mn doped SiC films due to the increased Si vacancy concentration. A weaken emission also at 414nm, which was approximately 0.7 times in intensity, was observed in Co doped SiC films due to the decreased Si vacancy concentration. For co-doping of Co and Mn with a same total concentration, the luminescent intensity kept almost unchanged due to the compensation effect.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2008年第8期1253-1255,1258,共4页
Journal of Functional Materials
基金
国家高技术研究发展计划(863计划)资助项目(2006AA032219)
长江学者和创新团队发展计划资助项目(IRT0534)
关键词
SIC薄膜
磁控溅射
掺杂
荧光性能
SiC film
magnetron sputtering
doping
photoluminescence
