摘要
以SiH4/H2为气源,用PECVD沉积技术,在低温(200℃)、高压下(230Pa)下制备出优质纳米晶硅薄膜。研究氢在高速生长纳米晶硅薄膜材料中的作用。实验表明,氢对纳米晶硅薄膜的高速生长起到非常关键的作用。随着氢稀释率由95%提高至99%,薄膜的晶化率由30%增大到70%,晶粒尺寸由3.0nm增大至6.0nm,而沉积速率却由0.8nm/s降低至0.3nm/s。
Nano-crystalline silicon films were prepared from SiH4 diluted with hydrogen by plasma enhanced chemical vapor deposition at low temperature （200℃） and high pressure （230Pa）. The effect of hydrogen on in Nano-crystalline thin films with fast growth was investigated. The experimental results indicate that the hydrogen is a very importance factor in the fast growth of nano-crystalline thin films. With the hydrogen dilution ratio increases from 95% to 99%, the crystalline fraction increases from 30% to 70%, the grain size increases from 3.0 to 6.0nm, but the deposition rate decreases from 0.8 to 0.3nm/s.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2008年第11期1839-1842,共4页
Journal of Functional Materials
基金
韩山师范学院扶持科研课题资助项目(FC200508)
韩山师范学院青年科研基金资助项目(0503)
关键词
纳米晶硅薄膜
氢稀释
晶化率
RF-PECVD
nano-crystalline silicon thin films
hydrogen dilution crystalline fraction
RF-PECVD
