摘要
使用三层平板波导理论分析了半导体量子阱激光器远场分布。针对大功率激光器讨论了极窄和模式扩展波导结构方法减小垂直方向远场发散角,得到了极窄波导结构量子阱激光器远场分布的简化模型,获得了垂直发散角的理论值,垂直方向远场发散角减小为28.6°;使用传输矩阵方法模拟了模式扩展波导结构量子阱激光器的近场光斑及远场分布,垂直方向远场发散角减小为16°。实验测试了极窄和模式扩展波导结构量子阱激光器的垂直发散角,理论结果与实验测试获得的发散角基本一致,实现了降低发散角的要求,获得了小发散角量子阱激光器。
The far-field distribution of the quantum well semiconductor laser was analyzed by the three-tier flat-panel waveguide theory. Aiming at the high-power laser, the vertical far-field divergence angle was reduced by the very narrow waveguide and the mode expanding waveguide structures, a simplified model of the far-field distribution of quantum-well lasers with a very narrow waveguide structure and the theoretical value of the vertical divergence angle were achieved, the vertical divergence angle was reduced to 28.6°. The near-field spot and far-field distribution of the quantum-well lasers with the mode expanding waveguide structure were simu- lated by the transfer matrix method, the vertical divergence angle was reduced to 16°. The vertical divergence angles of the very narrow waveguide and the mode expanding waveguide structures of quantum-well lasers were tested experimentally. The divergence angles of theoretical result and experimental test were the same basically. Requirements for reducing the divergence angle were realized. The quantum-well laser with a little divergence angle was achieved.
出处
《微纳电子技术》
CAS
2008年第11期635-638,共4页
Micronanoelectronic Technology
关键词
量子阱激光器
极窄波导
模式扩展
波导结构
发散角
quantum-well laser
a very narrow waveguide
mode expanding
waveguide structure
divergence angle
