摘要
采用顶接触结构研制了以Ta2O5/PMMA为绝缘层,有机材料PTCDI-C12为有源层的低电压n型有机场效应晶体管。其中Ta2O5薄膜采用阳极氧化方法制备,PMMA薄膜通过溶液旋涂法制备。与基于单一Ta2O5绝缘层的器件相比,双绝缘层器件的电学性能大幅提高。经测试得到器件场效应电子迁移率为0.063 cm2/Vs,开关电流比为1.7×104,阈值电压为2.3 V。
A kind of top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5/PMMA as the double insulator and PTCDI-Cl2 as the semiconductor active layer. The Ta2O5 layer was prepared by using simple economical anodization technique and the PMMA layer was prepared by using spin-coating method. Compared to the OFET with single Ta2O5 insulator,the device with double insulators shows obviously better electrical performance. It has the filed-effect electron mobility of 0. 063 cm^2/Vs,on/off current ratio of 1.7 × 10^4 and the threshold voltage of 2.3 V.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2008年第12期1602-1605,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(60676033)
