摘要
利用共沉淀方法制备了Al掺杂SnO2材料。并通过XRD与R-t特性测试仪,研究其相结构与R-t特性。结果表明:600℃煅烧获得了高纯、四方相的Al掺杂SnO2,其晶粒度为9.8nm;且具有良好的NTC效应,材料常数为4484K。利用半导体热力学理论讨论了Al掺杂SnO2材料的NTC特性机理。
Al-doped SnO2 material was prepared by coprecipitation method. And its phase structure and R-t characteristic were investigated by XRD and R-t characteristic tester. The results show that high pure tetragonal phase of Al-doped SnO2 with the crystallite of 9.8 nm is obtained by calcination at 600 ℃, and the materials have a good effect of negative temperature coefficient of resistance with the material constants of 4 484 K. The mechanism for NTC characteristic is discussed by using thermodynamics theory of semiconductor.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2008年第12期25-26,29,共3页
Electronic Components And Materials
基金
教育部留学回国人员科研启动基金资助项目(No.2006331
No.20071108)
教育部高校博士点专项科研基金资助项目(No.20070533119)
