摘要
This paper derives the expressions for the ordering degree and the modulation factor of A and B atoms in AXB1-xC epilayers of ternary III-V semiconductor alloys. Using these expressions, it identifies quantitatively the alternating atom-enhanced planes, compositional modulations, atomic ordering degree on the group-III sublattices and the fine structure of NMR spectra.
This paper derives the expressions for the ordering degree and the modulation factor of A and B atoms in AXB1-xC epilayers of ternary III-V semiconductor alloys. Using these expressions, it identifies quantitatively the alternating atom-enhanced planes, compositional modulations, atomic ordering degree on the group-III sublattices and the fine structure of NMR spectra.
基金
Project supported by the National Natural Science Foundation of China (Grant No 60572177)
CAUC Foundation (Grant No 05yk27s)
