摘要
作为一种性能优良的电热元件,SiC具有极佳的力、热、电特性。通过对SiC电热元件制备工艺的研究,找出了最佳素烧温度和最佳烧结温度制度。通过测试最佳工艺条件下制品的密度、强度、电阻率,并利用XRD,SEM测试其晶体结构和微观形貌,分析了影响碳化硅电热元件电阻率和力学性能的工艺因素。结果表明:素烧温度在1000℃,保温30min,烧成温度在1980～2060℃时的试样强度最高,电阻率值也比较合理。
As a kind of high performance electric heating element, silicon carbide has excellent mechanical, heat and electrical performance. The best biscuit firing temperature and temperature rising curve, sintering temperature system are discovered through study on the preparation process of silicon carbide electric heating element. The influencing factors of silicon carbide electric heating element electric resistivity and mechanical property are analyzed through test of the product electr/c resistivity, bending strength , compressive strength in the best process conditions and analysis of its crystal structure and micro-topography by XRDand SEM. The results reflect that when the unglazed pottery temperature is 1 000℃, keep temperature for 30 min, sintering temperature between 1 980 and 2 060℃, the electric heating element has best intensity while the electric resistivity is also reasonable.
出处
《西安科技大学学报》
CAS
北大核心
2008年第4期730-734,共5页
Journal of Xi’an University of Science and Technology
基金
国家发改委重点研究课题(2006MXHZKT06)
关键词
碳化硅
电热元件
制备工艺
电阻率
力学性能
silicon carbide
electric heating element
preparation process
electric resistivity
mechanical property
