摘要
采用超声电沉积-热处理两步法和超声共沉积一步法在钼基底上制备了致密的Cu-In合金薄膜。分别用SEM,EDS和XRD分析了Cu/In双层膜以及Cu-In合金膜的表面形貌、成分及相组成。结果表明:采用不同的电沉积工艺参数可以调节合金膜的Cu/In比率;超声电沉积可以得到晶粒细小、均匀致密的Cu,In以及Cu-In合金薄膜;两步法中超声电沉积得到的双层膜为CuIn和Cu或In相,经过热处理后转变为Cu11In9和Cu或In相;一步法超声共沉积得到的合金膜主要为CuIn相,根据Cu/In比率的不同,还会含有少量的Cu11In9或In相。
The Cu-In ahoy films were prepared on Mo substrate by ultrasonic electrodepositing and heat treatment （two-step method） and ultrasonic co-electrodepositing （one-step method ）. Surface morphology, chemical composition and phase presence in the Cu/In double layer films and the Cu-In alloy films were analyzed by scanning electron morphology （SEM）, energy dispersive spectroscopy （EDS） and X-ray diffraction （XRD）. Results showed that the Cu/In ratio could be adjusted by different processing parameters; the compact films with the fine grains could be obtained by ultrasonic electrodepositing in two-step method; the double layer films prepared by ultrasonic electrodepositing consisted of CuIn and Cu or In phase, which transformed into Cull In9 and Cu or In phases after heat treatment; Cu-In alloy films prepared by one step ultrasonic eleetrodepositing were mainly composed of Culn phase. Depending on Cu/In ratio in the solution, some films also contained a small amount of CunIn9 or In phase.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2008年第6期739-743,共5页
Chinese Journal of Rare Metals
