摘要
给出了Ｍ／ａ－Ｓｉ∶Ｈ／ＳｎＯ２结构的平衡态能带图，用光电压法和Ｃ－Ｖ特性法对该结构的双势垒进行了实验验证。给出了背结的接触电势差，同时发现这种结构用作光电器件时小势垒的影响可以忽略。其中Ｃ－Ｖ特性及其判别法尚未见报导。
The equilibrium energy band diagram of M/a Si∶H/SnO 2 structure is given.The dual barriers of this structure with C V characteristic of the front back junctions is verified with the way of photoelectric effet.The contact electromotance of the back junction is given.When using it as a photoelectric device,the effects of the back barrie can be ignorable.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1998年第1期80-85,共6页
Acta Energiae Solaris Sinica
