期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

YZO薄膜的Sol-gel制备及其性能 被引量：2

Preparation and Characteristics of Yttrium-doped ZnO Thin Films by Sol-gel Process
下载PDF
导出
摘要 采用Sol-gel法在普通载玻片上制备YZO薄膜。研究了陈化时间和Y掺杂量对薄膜晶体结构、表面形貌和光学性能的影响，并分析和探讨了工艺参数与结构和性能之间的关系。实验结果表明，YZO薄膜为纤锌矿结构，呈C轴择优取向生长，平均透光率（380～760m）超过85％。实验还发现，陈化时间存在最优值，YZO薄膜随着Y掺杂量的增加晶体结晶质量下降。 Yttrium-doped zinc oxide thin films on glass substrates are prepared by the sol-gel process. The effects of the aging time and yttrium dopant concentration on the structure, morphology and optical properties of the thin films are investigated. The results show that YZO thin films have hexagonal wurtzite structure with high c-axis orientation. The average transmittance of YZO thin films in the visible range （380~760nm） is beyond 85%. The best aging time is 72b, The crystal quality of YZO thin films is decreased with the increase of the dopant concentration.
作者 郭米艳 张萌 肖宗湖
机构地区 南昌大学材料科学与工程学院
出处 《材料导报》 EI CAS CSCD 北大核心 2009年第2期83-86,共4页 Materials Reports
基金 教育部长江学者与创新团队发展计划资助项目(IRT0730)
关键词 SOL-GEL法 YZO薄膜 陈化时间 透光率 sol-gel method, yttrium-doped ZnO thin films, aging time, transmittance
分类号 O484 [理学—固体物理]
  • 相关文献

参考文献11

  • 1Lucio-Lopez M A, Luna-Arias M A, Maldonado A, et al. Preparation of conducting and transparent indium-doped ZnO thin films by chemical spray [J]. Sol Energy Mater Sol Cells, 2006,90(60) : 733
  • 2Kim HyunJin, Lee HoNyeon, Park JaeChel, et al. The mechanism of improvement of contact resistivity in TFT-LCDs between IZO layers and Al-based metal lines by diffusion of Mo atoms[J]. Curr Appl Phys,2002,2(6):451
  • 3Matsubara K, Fons P, Iwata K, et al. ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications [J]. Thin Solid Films, 2003,431-432 : 369
  • 4Liu W, Gu S L, Ye J D, et al. Blue-yellow ZnO homostrucrural tight-emitting diode realized by metalorganic chemical vapor deposition technique[J]. Appl Phys Lett, 2006, 88 (9) :092101
  • 5Wang P, Chen Nufou, Yin Z G. P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering[J]. Appl Phys Lett, 2006,88(15) : 152102-1
  • 6Oh MinSuk, Kim SangHo, Seong TaeYeoru Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition [J]. Appl Phys Lett, 2005,87:122103
  • 7Rozati S M, Akesteh Sh. Characterization of ZnO : Al thin films obtained by spray pyrolysis technique[J]. Mater Charact, 2007,58 : 319
  • 8Monteiro T, et al. Optical and structural analysis of bulk ZnO samples undoped and rare earth doped by ion implantation[J]. Superlattices Microstruc, 2006,39:202
  • 9Mohammad M T, Hashim A A, Al-Maamory M H. Highly conductive and transparent ZnO thin films prepared by spray pyrolysis technique[J]. Mater Chem Phys, 2006,99:382
  • 10宁光辉,赵晓鹏.Zn_(1-x)Mg_xO的溶胶凝胶法合成及其特性研究[J].功能材料,2004,35(3):328-329. 被引量：3

二级参考文献16

  • 1Nicoll F H. [J]. Appl Phys Lett, 1966, 9:13-15.
  • 2Yu P, Tang Z K, Wong G K L, et al. 23nd Int Conf on the Physics of Semiconductors [C]. Singapore: World Scientific, 1996. 1453-1456.
  • 3Huang M H, Mao S, Yang P. [J].Science,2001,292: 1897-1899.
  • 4Ohtomo A, Kawasaki M, Koida T, et al. [ J]. Applied Physics Letters,1998, 72(19): 2466-2468.
  • 5Teng C W, Muth J F, Ozgur u U, et al. [ J]. Applied Physics Letters,2000, 76(8): 979-981.
  • 6Jin Y B, Zhang B, Yang S M, et al. [ J]. Solid State Communications,2001,119: 409-413.
  • 7Minemoto T, Negami T, Nishiwaki S, et al. [ J ]. Thin Solid Films,2000, 372: 173-176.
  • 8Kang J H, Park Y R, Kim K J. [ J]. Solid State Communications,2000, 115: 127-130.
  • 9Fujihara S, Sasaki C, Kimura T. [J]. J European Ceramic Society,2001, 21: 2109-2112.
  • 10Meulenkamp E A. [J]. J Phys Chem B, 1998, 102: 5566-5572.

共引文献2

同被引文献10

  • 1Zhu Liping, Li Jiesheng, Ye Zhizhen, et al. Photoluminescenee of Ga-doped ZnO nanorods prepared by chemical vapor deposition[J]. Opt Mater, 2008,31(2) : 237.
  • 2Xue H, Xu X L, Chen Y, et al. Influence of Ag-doping on the optical properties of ZnO films[J]. Appl Surf Sci,2008, 255(5) : 1806.
  • 3Choi Mu Hee, Ma Tae Young. Erbium concentration effects on the structural and photoluminescence properties of ZnO : Er films[J]. Mater Lett,2008,62(12-13) : 1835.
  • 4Wang X B, Song C, Geng K W, et al. Photol and raman scattering of Cu-doped ZnO films prepared by magnetron sputtering[J]. Appl Surf Sci, 2007, 253 (16): 6905.
  • 5Li Luyan, Liu Hui, Luo Xiaoguang, et al. Ferromagnetism in polycrystalline Cr-doped ZnO films: Experiment and theory[J]. Song Solid State Commun, 2008,146 (9) : 420.
  • 6Elanchezhiyan J, Bhuvana K P, Gopalakrishnan N, et al. Realization of room temperature ferromagnetism in Zn1-x- Cr3O thin films growth by RF magnetron sputtering[J]. J Alloys Compd, 2009,468 (1-2) : 7.
  • 7Tetsuya Yamamoto, Hiroshi Katayama-Yoshida. Unipolarity of ZnO with a wide-band gap and its solution using codoping method[J]. J Cryst Growth, 2000,214-215(2) : 55.
  • 8Parmod Sagar, Shishodia P K, Mehra R M, et al. Photoluminescence and absorption in sol-gel-derived ZnO films[J]. J Lumin, 2007,126(2) : 800.
  • 9Zhang Yang, Zhang Ziyu, Lin Bixia, et al. Effects of Ag doping on the photoluminescence of ZnO films grown on Si substrates[J]. J Phys Chem B, 2005,109 (41) : 19200.
  • 10赵俊锋,陈建华,王旭红,沈晓冬,陆春华.Ni掺杂ZnO晶体结构和红外光谱特性的研究[J].材料导报,2009,23(6):29-31. 被引量：13

引证文献2

二级引证文献3

材料导报
2009年 第2期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部