摘要
Based on the continuum elastic theory, this paper presents a finite element analysis to investigate the influences of elastic anisotropy and thickness of spacing layer on the strain field distribution and band edges （both conduction band and valence band） of the InAs/CaAs conical shaped quantum dots. To illustrate these effects, we give detailed comparisons with the circumstances of isolated and stacking quantum dot for both anisotropic and isotropic elastic characteristics. The results show that, in realistic materials design and theoretical predication performances of the optoelectronic devices, both the elastic anisotropy and thickness of the spacing layer of stacked quantum dot should be taken into consideration.
Based on the continuum elastic theory, this paper presents a finite element analysis to investigate the influences of elastic anisotropy and thickness of spacing layer on the strain field distribution and band edges （both conduction band and valence band） of the InAs/CaAs conical shaped quantum dots. To illustrate these effects, we give detailed comparisons with the circumstances of isolated and stacking quantum dot for both anisotropic and isotropic elastic characteristics. The results show that, in realistic materials design and theoretical predication performances of the optoelectronic devices, both the elastic anisotropy and thickness of the spacing layer of stacked quantum dot should be taken into consideration.
基金
Project supported by the National Basic Research Program of China (Grant No 2003CB314901)
the National Natural Science Foundation of China (Grant No 60644004)
the High School Innovation and Introducing Talent Project of China (Grant NoB07005)
