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A new analytical model of high voltage silicon on insulator(SOI) thin film devices 被引量:5

A new analytical model of high voltage silicon on insulator(SOI) thin film devices
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摘要 A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon fihn thickness decreasing especially in the case of thin films, and can come to 141V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (VB,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results. A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon fihn thickness decreasing especially in the case of thin films, and can come to 141V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (VB,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第1期315-319,共5页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China (Grant No 60436030) National Laboratory of Analogue Integrated Circuits,China (Grant No 9140C090305060C09)
关键词 silicon critical electric field breakdown voltage thin silicon layer SOI high voltage device silicon critical electric field, breakdown voltage, thin silicon layer, SOI high voltage device
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参考文献16

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同被引文献49

  • 1徐国亮,朱正和,马美仲,谢安东.甲烷在外场作用下的光激发特性研究[J].物理学报,2005,54(7):3087-3093. 被引量:27
  • 2郭宇锋,刘勇,李肇基,张波,方健,刘全旺,张剑.阶梯掺杂漂移区SOI高压器件浓度分布优化模型[J].微电子学,2005,35(3):256-259. 被引量:2
  • 3张波,段宝兴,李肇基.具有n^+浮空层的体电场降低LDMOS结构耐压分析[J].Journal of Semiconductors,2006,27(4):730-734. 被引量:6
  • 4秦成娟,王新生,周文孝.碳化硅陶瓷的研究进展[J].山东陶瓷,2006,29(4):17-19. 被引量:21
  • 5李缨,黄凤萍,梁振海.碳化硅陶瓷的性能与应用[J].陶瓷,2007(5):36-41. 被引量:51
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  • 10LI Zhaoji,LUO Xiaorong,ZHANG Bo,et al.The enhancement of dielectric layer field of SOI high voltage devices[C] // Fouth Joint Symp Opto-and Microelec Dev and Circ.Duisburg,Germany.2006:61-64.

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