摘要
本文用多种方法分析MOCVD外延片的表面形貌、结晶性、界面和缺陷、组分和其均匀性,电、光性能。在15×15mm^2面积上,HgCdTe外延层表面形貌较好,为单晶。CdTe和HgCdTe外延层的半宽度为450弧度秒。界面平坦、清晰过渡层约0.12μm,几乎没有发现Ga、As的扩散,但局部有微观缺陷。X值可生长出0.1～0.8,均匀性△X=0.008,典型样品,77K下,电子浓废为1.4×10^(16)cm^(-3),迁移率为7.4×10~4cm^2/V·S,透过率约42％。
We have analyzed the surface morphology, crystallinity, interface, defects, X-value, compositionamil uniferty, and photoelectricity of the MOCYD epitaxial layers. The HgCdTe in the area of 15×15mm^2 show the good mophologies and monocrystalline. Their interfaces are smooth and defined well. The FWHM of epitaxial CdTe and HgCdTe are 450 arc. sec., the diffussions of Ga and As are little or no found in the width of 0.12μm, but there are microdefects in some small regions. The ranges of X value are 0.1～0.8, uniformity △x is about 0.008. The electronis concentration, mobility and transmission of a typical sample is respectly 1.4×10^(16)cm^(-3), 7.4×10~4cm^2/v·s and 42% at 77K.
出处
《激光与红外》
CAS
CSCD
北大核心
1990年第1期46-51,共6页
Laser & Infrared
