摘要
本文研究了Ga_(0.65)Al_(0.35)As材料的光致发光效率与掺Zn浓度的关系,讨论了GaAlAs红色发光管的内量子效率与其芯片中各层掺杂浓度的关系。设计了出光效率高的芯片电极。用此电极制成的发光管芯片的功率效率较用目前通用的电极制成的发光管芯片的功率效率高一倍。设计了一种聚光性好的管壳,其发散角在5°以内。
The present paper represents the relationship between the photoluminenscence efficiency of GaAIAs and Zn concentration, and the effect of doping level to quantum efficiency. In order to get a high out-power, a new shape of electrodes and packing have been designed.
出处
《吉林大学自然科学学报》
CAS
CSCD
1990年第4期35-40,共6页
Acta Scientiarum Naturalium Universitatis Jilinensis
