摘要
采用射频反应磁控溅射法在玻璃衬底上成功制备出具有c轴高择优取向的ZnO薄膜,利用X射线衍射仪及荧光分光光度计研究了氧分压变化对ZnO薄膜的微观结构及光致发光特性的影响。结果表明,当工作气压恒定时,合适的氧分压能够提高ZnO薄膜的结晶质量。对样品进行光致发光测量时,所制备ZnO薄膜样品在400 nm左右出现较强紫光发射,在446 nm出现蓝光发射,经分析认为紫光发射来源于激子复合,而446 nm左右的蓝光发射来源于ZnO薄膜内部的Zni缺陷。
ZnO thin films with c-axis preferred orientation were prepared on glass substrate by RF coreactive magnetron sputtering technique, the influence of oxygen partial pressures on the microstructure and optical properties of ZnO thin films were studied by X-ray diffractometry （XRD） and fluorescence spectrophotometer. XRD results show that when the working pressure is kept in constant, the growth behavior of the ZnO thin film is mainly decided by the density of oxygen in the space where the sample is deposited, and the crystallization of the ZnO thin films is promoted by desirable oxygen partial pressure. In addition, the photoluminescence （PL） spectrums of the five samples were measured at room temperature, violet peaks located at about 400 nm and blue peaks located at 446 nm were observed from the PL spectra of the five samples. It concludes that the violet peak may correspond to the exciton emission and the blue peak is attributed to the interstitial zinc （Zni）.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第2期123-126,共4页
Semiconductor Technology
基金
国家民委科研项目(02XB08)
甘肃省自然科学基金(0803RJZA008)
西北民族大学校中青年科研基金(X2006-01)
