摘要
采用扫描电镜(SEM)、X光电子能谱仪(XPS)、二次离子质谱仪(SIMS)等多种微分析手段对失效器件芯片表面生成物产生原因进行了分析,同时结合器件制备工艺和器件可靠性实验分析了Si3N4钝化层质量与工艺的关系。通过大量分析实验,确定了器件失效的重要原因是Si3N4钝化层存在缺陷而导致器件因表面漏电而失效。实验结果表明,将Si3N4钝化层中SiOx含量控制在10%以下,器件管壳内水分控制在1%以下,器件经过1 000 h电老化后芯片表面无生成物产生。
The products grown on the surface of the failure device, and the relations of quality and processs of Si3N4 passivation layer were analysed by SEM, XPS and secondary ion mass spectrometry （SIMS）. The analysis and experients results show that the structural defects in Si3N4 passivation layer is an important reason that leads to the leakage of device. It reveals that when SiOx is controlled under 10% in Si3N4 passivation layer and the water below 1% in device, no products will be grown on the surface after 1 000 h aging test.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第2期142-145,共4页
Semiconductor Technology
关键词
氮化硅
钝化层
表面分析
生成物
Si3N4
passivation layer
surface analysis
product
