摘要
化学机械抛光(CMP)是获得超平滑无损伤铌酸锂基片的有效加工方式。其中抛光液pH值、加工载荷和抛光盘转速是影响铌酸锂基片加工表面质量的重要因素。文章采用田口方法对这3个重要影响因素进行了优化设计,得到以表面粗糙度为评价条件的综合最优抛光参数。实验分析表明,当抛光液pH值为10.8,加工载荷90kPa,抛光盘转速50r/min时,经过3h的抛光后,可以获得超平滑无损伤的铌酸锂基片(Ra为1nm)。
Chemical mechanical polishing （CMP） is an efficient ultra-precise machining method to obtain ultra-smooth LiNbO3 wafer. The paper optimized design the three key parameters-slurry pH, polishing load and plate rotation speed, by Taguchi method and obtained the comprehensive optimized polishing parameter used in evaluating the roughness of surface. The experiment analysis result shows that when the slurry pH is 10.9, the polishing load is 62.72 kPa and the plate rotation speed is 50 r/min, after 3 hours, polishing the mirror-like woundless surface of LiNbO3 wafer can be obtained.
出处
《轻工机械》
CAS
2009年第1期95-97,共3页
Light Industry Machinery
基金
浙江省自然科学基金(M503049)
关键词
铌酸锂基片
化学机械抛光
田口方法
LiNbO3 wafer
chemical mechanical polishing
Taguchi method
