摘要
根据半导体理论并结合实验结果，分析了以GeSi／Si超晶格为吸收材料的PIN红外探测器的漏电现象。结果表明：当锗含量x=0．6时，探测器的暗电流密度可达到10-5A／cm2，这是由超晶格的禁带宽度决定的。实际器件的暗电流较大，主要是表面因素和加工工艺的影响。
The leakage phenomenon in PIN photodedector, in which absorbingmaterial is GcSi/Si supperlattice,is analyzed in this paper. The theory and experiment show that dark current density of the PIN diode detector is about 10-5 A/cm2when Ge content x= 0. 6,that is decided by width of bandgap. The high dark current of the device is caused mainly by surface effect and fabrication processing.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第1期54-58,共5页
Research & Progress of SSE
基金
国家自然科学基金
