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一种高精度曲率补偿带隙基准电路 被引量：4

A Curvature-Compensated CMOS Bandgap Voltage Reference for High Precision Applications
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摘要 设计了一种高精度高阶补偿的带隙基准参考电压电路，通过Buck氏电压转移单元和与温度无关的电流对V雎进行高阶补偿。测试表明，温度在-45℃～125℃时，温度系数为5．9×10^-6V／℃，在3．5～5．5V之间的电压调整率为0．4mV／V。采用低压共源共栅电流镜结构，以减少对电源电压的依赖，消除了精度与余度之间的矛盾。 A high precision bandgap reference with higher-order curvature compensation was designed. The higher-order compensation of VBE was implemented by utilizing Buck＇s voltage transfer cell and temperature independent current. Test results showed that the circuit had a temperature coefficient of 5. 9 ×10^-6 V/℃ in the temperature range from -45 ℃ to 125 ℃, and an average line regulation of 0. 4 mV/V for 3.5 V to 5.5 V supply voltage. A low voltage cascode current mirror was also introduced to reduce the dependency on supply voltage, thus eliminating the conflict between precision and margin.
作者 李华 吕坚 蒋亚东
机构地区 电子科技大学电子薄膜与集成器件国家重点实验室
出处 《微电子学》 CAS CSCD 北大核心 2009年第1期38-41,共4页 Microelectronics
基金 国家杰出青年基金资助项目(60425101) "教育部新世纪优秀人才计划"资助项目(NCET-04-0896)
关键词 CMOS 带隙基准源 高阶曲率补偿 低压共源共栅电流镜 CMOS Bandgap reference Higher-order curvature compensation Low voltage cascode current mirror
分类号 TN432 [电子电信—微电子学与固体电子学]
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参考文献11

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二级参考文献1

共引文献7

同被引文献18

  • 1王忆,何乐年,严晓浪.温度补偿的30nA CMOS电流源及在LDO中的应用[J].Journal of Semiconductors,2006,27(9):1657-1662. 被引量：12
  • 2尹韬,杨海钢,刘珂.一种适用于微传感器读出电路的低噪声、低失调斩波放大器[J].Journal of Semiconductors,2007,28(5):796-801. 被引量：19
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  • 8RAZAVI B.模拟CMOS集成电路设计[M].陈贵灿,程军,张瑞智,等译.西安:西安交通大学出版社,2003:309-329.
  • 9BUCK A E, MCDONALD C L, LEWIS S H, et al. A CMOS bandgap reference without resistors [J]. IEEE J Sol Sta Circ, 2002, 37(1) : 81-83.
  • 10OGUEY H J, AEBISCHER D. A CMOS current reference without resistance [J]. IEEE J Sol Sta Circ, 1997, 32(7): 1132-1135.

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二级引证文献14

微电子学
2009年 第1期

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