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氧化钨纳米线薄膜的制备和分析 被引量:1

Preparation and Analysis of Tungsten Oxide Nanowires Film
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摘要 报道了采用热蒸发方法制备氧化钨纳米线薄膜的实验.结果表明:改变蒸发源温度和衬底温度,氧化钨纳米线的生长存在一定的规律性.即随着蒸发源温度的升高,氧化钨纳米线的直径逐渐增加,且直径的增长速度比高度的增长速度快;随着衬底温度的升高,氧化钨纳米线的高度也逐渐增加,高度的增长速度比直径的增长速度快. This paper introduces synthesis of tungsten oxide nanowires film by thermal evaporation. The study results indicate that when the temperature of the source and substrate changes, the growth of the tungsten oxide nanowires changes with regularity, i.e., as the temperature of the source of evaporation and substrate increases, the diameter of tungsten oxide nanowires increases gradually and its diameter increases faster than its height; as the temperature of the substrate increase, the height of the tungsten oxide also increases gradually and its height increases faster than its diameter.
作者 陈毅湛
机构地区 五邑大学数理系
出处 《五邑大学学报(自然科学版)》 CAS 2009年第1期26-30,共5页 Journal of Wuyi University(Natural Science Edition)
关键词 氧化钨纳米线 热蒸发 X射线衍射 tungsten oxide nanowires thermal evaporation X-Ray diffraction
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