摘要
采用溶胶凝胶法成功地制备出氮化镓薄膜.以单质镓为镓源制备镓盐溶液、柠檬酸为络合剂制备出前驱体溶胶,再甩胶于Si(111)衬底上,在氨气氛下热处理制备出GaN薄膜.X射线衍射(XRD)分析及选区衍射分析(SAED)表明所制备的薄膜是六角纤锌矿结构GaN薄膜;XPS分析其表面,结果显示样品中的镓元素、氮元素均以化合态存在,且Ga:N约为1:1;PL谱分析结果表明所制备的薄膜具有优良的发光性能.
Thin GaN films were successfully deposited on Si （111） substrates by the Sol-gel technique, which is simple and cost-effective in the preparation of epitaxial films. The precursor sol was prepared when Gallium metal was used as Ga source and citric acid as complexing agent. The as-prepared films were confirmed as single crystalline GaN with wurtzite structure by X-ray diffraction and selected diffraction. X- ray photoelectron energy spectroscopy in the surface of the films proves that Gallium and Nitrogen elements all exist as compound,and the surface stoichiometry of Ga ： N is 1 ： 1. The optic characteristics of the flims was test in PL,and the result reveals that the GaN flims has high luminous performance.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2009年第1期171-174,共4页
Acta Photonica Sinica
基金
西北大学博士科研启动基金(0kydf075)资助
