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硅薄膜晶体管液晶显示器的发展 被引量:3

Silicon Thin-Film Transistor Liquid Crystal Displays
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摘要 在当前迅速发展的液晶显示技术中,薄膜晶体管液晶显示器以其大容量、高清晰度和高品质全真彩色[1]受到人们的广泛青睐.薄膜晶体管液晶显示器的显示质量和整体性能在很大程度上取决于薄膜晶体管性能,薄膜晶体管(TFT)是众多场效应晶体管(FET)中的一种[2].非晶硅用于制作薄膜晶体管液晶显示器技术的成熟,使非晶体薄膜晶体管液晶显示器在薄膜晶体管液晶显示器的市场中占据了主导地位,而非晶硅薄膜晶体管由于其低迁移率、电导率[3]等性能,严重制约了薄膜晶体管液晶显示器的发展,寻找合适的替代品,追求高迁移率和高电导率一直是研究人员关注的焦点,在此基础上,多晶硅、微晶硅相继发展,虽然在一定程度上暂时解决了迁移率、电导率低的问题,但因多晶硅、微晶硅的价格昂贵、材料短缺,因而未能动摇非晶硅的主导地位.随后的纳米硅薄膜晶体管液晶显示器依靠其本身具有高电导率、高迁移率[4—6]的优越性以及当前纳米技术的进展而成为一个引人注目的新亮点. In liquid crystal display (LCD) technology, thin-film transistor LCDs are currently favored due to their high-capacity, high -definition, and high-quality full color[ 1]. The display quality and overall performance of such monitors depend largely on the performance of the thin-film transistors, which are one of a large group of metal-oxidesilicon field-effect transistors[2]. Amorphous silicon thin-film transistor LCDs currently occupy a dominant position in the market as the technology is mature, but its further development is seriously restricted because thin-film transistors have low mobility and conductivity. The pursuit of a suitable replacement with high mobility and conductivity led to great progress in the development of polycrystalline silicon and silicon-ceramic devices. Although the problems have been resolved temporarily to a certain extent, due to the high price and shortage of these materials the dominant position of amorphous silicon has not yet been shaken. Now, nano-silicon thinfilm transistor LCDs have become a new focus of attention because of their superior high conductivity, high mobility[4--6] , and the rapid progress of nanotechnology.
出处 《物理》 CAS 北大核心 2009年第3期186-190,共5页 Physics
基金 江苏省“六大人才高峰计划”(批准号:06-D-022)资助项目
关键词 液晶显示器 非晶硅 纳米硅 liquid crystal display, amorphous silicon, nano-silicon
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  • 1王玉如.液晶显示技术的最新进展[J].现代电子技术,2004,27(22):85-87. 被引量:10
  • 2许洪华,徐征,黄金昭,袁广才,孙小斌,陈跃宁.薄膜晶体管研究进展[J].光子技术,2006(3):135-139. 被引量:6
  • 3Meng Z G, Zhao S Y, Wu C Y, et al. Polycrystalline Silicon Films and Thin-Film Transistors Using Solution-Based Metal-Induced Crystallization [J]. JOURNAL OF DISPLAY TECHNOLOGY, 2006, 2 (3): 265-267.
  • 4Zhang D L, Wong M. Three-Mask Polycrystalline Silicon TFT With Metallic Gate and Junctions [J]. IEEE ELECTRON DEVlCELETTERS, 2006, 27(7): 564-565.
  • 5Wang K, Long H, Fu M, Yang G, Lu P X 2010 Opt. Lett. 35 1560.
  • 6Si G Y, Zhao Y H, Liu H, Teo S, Zhang M S, Huang T J, Danner A J, Teng J H 2011 Appl. Phys. Lett. 99 033105.
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