摘要
设计并研制了室温连续工作的单模1.3μm垂直腔面发射激光器(VCSEL),阈值电流为0.51mA,最高连续工作温度达到82℃,斜率效率为0.29W/A.采用InAsP/InGaAsP应变补偿多量子阱作为有源增益区,由晶片直接键合技术融合InP基谐振腔和GaAs基GaAs/Al(Ga)As分布布拉格下反射腔镜,并由电子束蒸发法沉积SiO2/TiO2介质薄膜上反射腔镜形成1.3μmVCSEL结构.讨论并分析了谐振腔模式与量子阱增益峰相对位置对器件性能的影响.
We present the design and fabrication of 1.3 μm vertical-cavity surface-emitting lasers （VCSELs）. This laser exhibits continuous-wave single-mode operation up to 82℃. The theshold current as low as 0.51 mA and a slop efficiency of 0.29 W/A have been achieved. This laser is composed of a wafer-bonded GaAs/Al（Ga）As distributed Bragg reflector （DBR） and a dielectric SiO2/TiO2 DBR with InAsP/InGaAsP strain-compensated multi-quantum wells grown in the cavity. The effect of cavity mode-gain offset on device performance is then discussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2009年第3期1954-1958,共5页
Acta Physica Sinica
基金
国家重点基础研究发展计划(973)项目(批准号:2003CB314903)的资助课题~~
关键词
垂直腔面发射激光器
晶片直接键合
应变补偿多量子阱
vertical-cavity surface-emitting laser,wafer-direct bonding,strain-compensated multi-quantum well
