摘要
通过氧本征内吸杂工艺前后硅片的实际器件制管试验、少子寿命测试及吸杂硅片的纵向解剖，制管性能大大改善，管芯平均制造合格率提高５％～１５％，硅片表面少子寿命提高一个数量级以上。另外研究还表明，吸杂硅片经高温氧化、扩散等器件工艺后，硅片表面清洁区厚度及吸杂区内缺陷密度基本是稳定的。
An intrinsic oxygen gettering process has been examined by online device process test,measurement of life time of the minority carrier,and profiles of etch pits distribution.The results indicated that the device process benefited significantly by the gettering process,the yield of the process improved by a factor of 5%～15%,and the life time of the minority carrier at the wafer surface increased by an order.In addition,it is shown that the thickness of the clean layer and the defect density in precipitation area of the gettered wafers are stable after high temperature oxidation and diffusion.
出处
《半导体技术》
CAS
CSCD
北大核心
1998年第3期57-60,共4页
Semiconductor Technology
