摘要
文中报导了用分子束外廷工艺在ＧａＡｓ（２１１）Ｂ衬底上生长了较高质量的中、长波ＨｇＣｄＴｅ薄膜材料。生长后的材料通过退火进行转型和调节电性参数。选择的组分分别为ｘ＝０．３３０和０．２２６的两种材料，７７Ｋ时载流子浓度和迁移率分别为ｐ＝６．７×１０１５ｃｍ－３、ｕｐ＝２６０ｃｍ２Ｖ－１ｓ－１和４．４５×１０１５ｃｍ－３、４１０ｃｍ２Ｖ－１ｓ－１。研制了平面型中、长波线列光伏探测器，其典型的探测器Ｄ分别为５．０×１０１０ｃｍＨｚ１／２Ｗ－１和２．６８×１０１０ｃｍＨｚ１／２Ｗ－１（１８０°视场下），其中６４元线列中波探测器与ＣＭＯＳ电路芯片在杜瓦瓶中耦含后读出并实现了红外成像演示。
In this paper,high quality of MWIR and LWIR HgCdTe epilayers grown on GaAs (211)B by MBE have been reported. After growth, electrical type conversion and adjustment of elec- trical parameters are performed using annealing technique. The Hg1-xCdxTe/GaAs composition of x -0.330 andx=0.226 are selected. At 77K, the carrier concentration and mobility are p=6.7× 1015cm-3 up=260cm2v-1s-1 and p=4.45× 1015cm-1 up- 410cm2V-1s-1 respectively The MWIR and LWIR linear HgCdTe PV planar photodectors with good performance have been fabricated. The typical detectivity D is 5 . 0 ×1010 cmHz1/2 W - 1 and 2 . 68 ×1010 cmHz1/2 W - 1 ( 1 80° FOV) , respectively. Thermal image of human fingers taken with a 64 elements MWIR line array photodetectors is demonstrated .
出处
《红外与激光工程》
EI
CSCD
1998年第2期11-13,16,共4页
Infrared and Laser Engineering
