摘要
介绍一种PHEMT MMIC功率放大器设计与实现方案。方案采用内匹配电路,盒体设计考虑到电路腔体内部电磁兼容特性的影响,因此具有增益高、集成度高、寄生特性较低、可靠性高和可操作性好等优点。将此设计方案通过仿真验证,结果表明各项指标可以满足设计预期的期望值,同时证明了方案的可行性。
A method designing PHEMT MMIC power amplifier is introduced. The method adopts the matching circuit. Moreover,effects of EMC are considered. So it has high - gain, high integration, low parasitic characteristics, high reliability and operational advantages. The designing simulation results can match the expected value of the initial period and indicate the feasible of this method.
出处
《现代电子技术》
2009年第7期171-173,共3页
Modern Electronics Technique
