摘要
采用直流磁控溅射制备TaN薄膜,研究了热处理对TaN薄膜微结构及电性能的影响。结果表明,退火温度及退火时间都将影响薄膜的微结构及方阻。随退火温度的升高和时间的延长,TaN薄膜的方阻逐渐增大,但当退火温度高于800℃时,由于氧化严重导致薄膜的方阻异常增大。退火可显著改善薄膜的TCR,制备态TaN薄膜的TCR值为-1.2×10^(-3),薄膜经800℃退火30min后,其TCR可降低到-7.0×10^(-4)。
Tantalum nitride films are deposited by reactive d. c. magnetron sputtering. The influences of annealing on the microstructures and electric properties of TaN thin films are explored. The results show that the annealing temperature and the annealing time both affect the microstructures and electric properties of TaN thin films. With the increase of the annealing temperature and annealing time, the sheet resistances of TaN thin films increase gradually. However,when the annealing temperature is higher than 800℃, the sheet resistance of the thin films increases remark- ably, which is due to the oxidation of TaN thin films at too high annealing temperature. Annealing can improve the TCR of TaN thin films from --1.2×10^-3 of as-deposited films to -7. 0×10^-4 of the film annealed at 800℃ and 30min.
关键词
TaN薄膜
退火
微结构
方阻
TaN films, annealing, microstructure, sheet resistance
