期刊文献+

Mg和碱金属元素Li、Na共掺杂ZnO薄膜的物性研究 被引量:3

Study of physical properties of Na/Mg and Li/Mg co-doped ZnO thin films
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摘要 采用溶胶凝胶法制备了Li-Mg、Na-Mg共掺杂的ZnO薄膜,利用扫描电子显微镜(SEM)、X射线衍射(XRD)和光致发光(PL)分别研究了薄膜的表面形貌、结构特性和发光性质。结果表明:Mg的掺杂促进了薄膜的C轴取向生长,Na-Mg共掺ZnO薄膜的结晶性优于Li-Mg共掺样品。随着Mg掺杂的增加,晶面距变大,禁带变宽,但Na-Mg和Li-Mg共掺杂中Mg对禁带宽度的调控力度小于仅有Mg掺杂的情况。Na-Mg、Li-Mg共掺导致ZnO薄膜在460 nm处出现一深能级蓝绿发光带,在403 nm处出现从导带底向浅受主能级跃迁产生的紫色发光峰,此外在355 nm3、75 nm处出现两个对应于激子第一、二能级的复合发光紫外发射峰。 Na/Mg and Li/Mg Co-doped ZnO thin films are prepared by Sol-Gel Method. Their micro-structures, morphologies, and photoluminescence properties are investigated by scanning electron microscope (SEM), X-ray diffraction (XRD), and photoluminescence (PL). The results indicate that with the increase of Mg dopant, the c-axis orientation is enhanced, the crystallinity for Na-Mg co-doped ZnO thin film is better than that for Li-Mg co-doped ZnO thin film. The distance between (002) planes and the energy gap increase with the Mg concentration in co-doped ZnO thin film. The broadening of the energy gap is less than that for Mg doped ZnO thin film. The blue luminescence band (430-480 nm) from the deep energy level emission is observed. The purple peak at 403 nm is attributed from the transition between conduction band bottom and shallow acceptor level. The ultraviolet emission peaks at 355 nm and 375 nm are from the recombination luminescence for the first and the second exciton energy levels.
出处 《实验技术与管理》 CAS 北大核心 2009年第3期37-41,共5页 Experimental Technology and Management
基金 国家自然科学基金(90406024) 安徽省省级教学研究项目 中国科学技术大学校级教学研究项目
关键词 溶胶凝胶 碱金属元素 ZNO薄膜 Sol-Gel technology alkali metal element ZnO thin films
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参考文献18

  • 1Ozgur U,Alivov Y I, Liu C, et al. A comprehensive review of ZnO materials and devices [J]. J Appl Phys, 2005, 98 (4) : 041301-041403.
  • 2Ahn B D,Kang H S,Kim J H, et al. Synthesis and analysis of Agdoped ZnO [K]. J Appl Phys, 2006,1001-[9]. 093701-093706.
  • 3Park C H, Zhang S B, Wei S H. Origin of p-type doping difficulty in ZnO: The impurity perspective[J]. Phys Rev B, 2002,66(7).. 073202-073204.
  • 4Meyer B K, Stehr J, Hofstaetter A, et al. On the role of group I elements in ZnO [J]. Applied Physics A, 2007(88) : 119-123.
  • 5QiuMX, YeZZ, HeHP, et al. Effect of Mgcontent on structural, electrical, and optical properties of Li-doped Zn1-x MgxO thin films[J]. Appl Phys Lett, 2007, 90(18): 182116-182118.
  • 6朱兴文,李英伟,李勇强,陆液,夏义本.Li、Mg掺杂ZnO薄膜PL特性研究[J].压电与声光,2006,28(6):690-691. 被引量:3
  • 7Dai L P, Deng H, Mao F Y, et al. The recent advances of research on p -type ZnO thin film [J]. J Mater. Sci:Mater Electron, 2008 (19): 727-734.
  • 8王烨,李伟,赵文刚,杨文继,王德明,马忠权.Na-Mg弱掺杂ZnO薄膜的结构和电学特性[J].上海大学学报(自然科学版),2006,12(6):604-609. 被引量:5
  • 9Yu J Z, Zhi Z Y, Wei Z X, et al. Realization of p-type ZnO films via monodoping of Li aeceptor [J]. Journal of Crystal Growth, 2005, 283(1-2) :180-184.
  • 10Ma Z Q, Zhao W G, Wang Y. Electrical properties of Na/Mg codoped ZnO thin films [J]. Thin Solid Films, 2007,515 (24): 8611-8614.

二级参考文献35

  • 1刘红霞,周圣明,李抒智,杭寅,徐军,顾书林,张荣.柱状ZnO阵列薄膜的生长及其发光特性[J].物理学报,2006,55(3):1398-1401. 被引量:24
  • 2埃克托瓦L.薄膜物理学[M].北京:科学出版社,1986.47-48.
  • 3CHEN Ye-fan,BAGNALL D M,KOH H J,et al.Plasma assisted molecular beam epitaxy of ZnO on cplane sapphire:growth and characterization[J].J Appl Phys,1998,84(7):3912-3918.
  • 4SHINOBU F,CHIKAKO S,TOSHIO K.Effects of Li and Mg doping on microstructure and properties of Sol-Gel ZnO thin films[J].J Euro Ceram Soc,2001,21:2109-2112.
  • 5NATSUME Y,SAKATA H.Zinc oxide films prepared by Sol-Gel spin-coating[J].Thin Solid Films,2000,372:30-36.
  • 6VANHEUSDEN K,CAI W L,ZHANG L D.Correlation between photoluminescence and oxygen vacancies in ZnO phosphors[J].Appl Phys Lett,1996,68(3):403-405.
  • 7LIN B X,FU Z X,JIA Y B.Greenluminescent center in undoped zinc oxide films deposited on silicon substrates[J].Appl Phys Lett,2001,79(7):943-945.
  • 8WANG Q P,ZHANG D H,XUE Z Y,et al.Violet luminescence emitted from ZnO films deposited on Si substrate by RF magnetron sputtering[J].Applied Surface Science,2002,201(1-4):123-128.
  • 9SHAN F K,KIM B I,LIU Z F,et al.Blueshift of near band edge emission in Mg doped ZnO thin films and aging[J].J Appl Phys,2004,95(9):4772-4776.
  • 10BIAN J M,LI X M,GAO X D,et al.Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis[J].Appl Phys Lett,2004,84:541.

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