摘要
A series of GaAs/InAs/GaAs samples were studied by double crystal X ray diffraction and the X ray dynamic theory was used to analyze the X ray diffraction results. As the thickness of InAs layer exceeds 1.7 monolayer, 3 dimensional InAs islands appear. Pendellosung fringes shifted. A multilayer structure model is proposed to describe the strain status in the InAs islands of the sample and a good agreement is obtained between the experimental and theoretical curves.
A series of GaAs/InAs/GaAs samples were studied by double crystal X ray diffraction and the X ray dynamic theory was used to analyze the X ray diffraction results. As the thickness of InAs layer exceeds 1.7 monolayer, 3 dimensional InAs islands appear. Pendellosung fringes shifted. A multilayer structure model is proposed to describe the strain status in the InAs islands of the sample and a good agreement is obtained between the experimental and theoretical curves.
