XPS Studyo f Silicon Irradiated with 750 MeV Ar Ion

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出处《IMP & HIRFL Annual Report》 1997年第0期70-72,共3页 中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

基金 SupportedpartlybytheChinaPostdoctoralScienceFoundationandtheChineseAcademyofSciences.

分类号 O571 [理学—粒子物理与原子核物理]

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IMP & HIRFL Annual Report

1997年第0期

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XPS Studyo f Silicon Irradiated with 750 MeV Ar Ion

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