摘要
用烧结多晶碳化硅靶采用射频溅射制取了SiC薄膜;通过加热基片和镀后的高温退火实现了SiC薄膜从非晶态到晶态的转变;利用AES、XPS、TEM、IR、UPS等对SiC薄膜的成分、结构、形貌、结合状态进行了分析;研究并分析了SiC薄膜从非晶态到晶态的转变过程及有关现象;制取了SiC薄膜温度传感器;对非晶态及晶态SiC薄膜温度传感器的电学性能、热稳定性及热敏特性进行了对比和研究。
SiC thin films have been deposited on substrates by RF-sputtering with sintered bulk SiC piece as a target. Untess the substrate heated ouer 500℃ the SiC thin film would be amorphous. The transtorm of SiC thin film from amorphous into crystalline state has been obfained by means of heating the substrates duriny deposition on annenling at higher temperature after deposltion. The composition, Crystallographic strueture, morphology and chemical bonding structure of both the amorphous and crystalline state films were analysed by AEE, XPS, TEM, IR, UPS. The experimental results show that the substrate temperature is a key parameter for any fundamental structural changes.
With both the amorphous and the crystalline stale SiC thin films we have manufactured several temperature sensors. The electric properties, the heat stability and the beat sensitive properties of these sensors are compared and investigated. The temperature sensors with crystalline state SiC thin films hnve higher reliability, stability and wider detection temperature range from 0℃ to 300℃.
出处
《真空科学与技术学报》
EI
CAS
CSCD
1989年第6期351-358,368,共9页
Chinese Journal of Vacuum Science and Technology
