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IC封装中引起芯片裂纹的主要因素 被引量:3

The Main Factors Causing Die Crack in IC Assembly Process
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摘要 芯片裂纹是半导体集成电路封装过程中最严重的缺陷之一。由于芯片裂纹最初发生在芯片的背面,而且有时要在高倍显微镜下才能观察到,所以这种缺陷在很多情况下不易被发现。文章主要介绍和探讨了IC封装过程中引起芯片裂纹的主要原因。划片刀速度、装片顶针位置/顶针高度和吸嘴压力、塑封框架不到位以及切筋打弯异常等都会引起芯片裂纹,从而在从IC焊接到PCB板或使用过程中出现严重的失效和可靠性质量问题。只有了解了导致芯片裂纹的各种因素,半导体集成电路封装厂商才能采取针对性的预防措施杜绝芯片裂纹这种致命的缺陷。 Die crack is one of the most serious defects in semiconductor Integrated Circuit assembly process. Most of time die crack defect are difficult to be detected out since this crack was induced from die backside initially, and some time this defect can only be found under high magnification. This artizle introduced the main factors which cause die crack in IC assembly process. The speed of wafer saw knife, the ejector pin position/ height and pick up force in die attach process, leadframe displacement in molding and package crack in Trim & Form process, etc, will cause die crack, and the failure may not be screened out during electrical final test. Instead, the failure may happen during the board assembly process or during application. The effective preventive actions can be taken to prevent die crack from happening after we understood the all factors which may cause die crack defects.
出处 《电子与封装》 2009年第4期33-36,共4页 Electronics & Packaging
关键词 芯片裂纹 塑封体裂纹 划片 装片 塑封 切筋打弯 die crack package crack wafer saw die attach molding and trim & form
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