摘要
提出了一种可以同时同位置探测紫外和红外信号的新型探测结构,分析了该结构的合理性,并对器件工艺进行了设计、分析和验证,制备出了AlGaN/PZT原型器件。该结构以AlGaN多层材料和PZT复合薄膜为基础,利用AlGaN宽禁带半导体的本征吸收和铁电薄膜的热电转化功能,实现对紫外和红外信号的电学响应。对该结构中各膜层的透射和吸收进行了测试和分析,在小于6μm的光谱测试范围内,宝石衬底的透过率约为80%,而AlGaN多层外延结构和多孔SiO2隔离层都对红外光吸收很少。结果证明:该结构可以实现不同吸收层对入射光束不同波段的吸收。以AlGaN器件工艺和溶胶-凝胶法制备PZT膜层为基础,研究了器件工艺,并最终研制出了首个AlGaN/PZT探测器件。
The new structure to detect ultraviolet and infrared lights at the same time and position was presented. The rationality of the structure was analyzed. The principle AlGaN/PZT device was manufactured for the first time. The fabrication of the detector was designed,analyzed and validated. Based on the AlGaN epilayer and PZT complex films, the electrical response the ultraviolet and infrared signal was realized by using the intrinsic absorption of wide-band semiconductor and the pyroelectric conversion of ferroelectric thin films. Transmissivity and absorptivity of the films were tested and analyzed. Transmissivity of the sapphire substrate was about 80% as wavelength is less than 6 μm. The infrared light was little absorbed by AlGaN multilayer and multi-hole. SiO2 isolation layer. Result shows that this structure is feasible to absorb different wave band lights by different absorption layers.
出处
《红外与激光工程》
EI
CSCD
北大核心
2009年第2期210-212,255,共4页
Infrared and Laser Engineering
基金
国家自然科学基金资助项目(60807037)
中国科学院知识创新工程青年人才领域前沿资助项目
