摘要
提出了一种用张应变层控制自组装量子点有序排列的方法，通过低压ＭＯＣＶＤ技术在ＩｎＰ衬底上利用ＧａＡｓ张应变层的控制作用成功地制备出正交网格化有序排列的ＩｎＡｓ岛状结构．
Abstract We present a new method to form ordered InAs quantum dots. By using GaAs tensile strained layer on (001) InP substrate, two dimensional alignment InAs islands are obtained on GaAs layer grown by LP MOCVD.
基金
集成光电子学国家重点实验室开放课题资助
关键词
砷化铟
磷化铟
MOCVD
砷化镓
Chemical vapor deposition
Semiconducting gallium arsenide
