摘要
设计了一个S频段宽带低噪声放大器。该放大器采用两级E—PHEMT晶体管（ATF541M4）级联结构，单电源供电模式。应用微波仿真软件ADS对匹配电路进行了优化设计，最后通过S参数及谐波平衡仿真得到放大器的各项性能参数，在2．7～3．1GHz频率范围内噪声系数小于0．6dB，带内增益大于30dB，带内平坦度小于±1dB，输入输出驻波比小于1．6dB，1dB增益压缩点输入功率不小于-15dBm。仿真结果表明，该设计完全满足性能指标要求。
An S -band broadband low noise amplifier（LNA） design is introduced. The amplifier configures a series of 2 - stage cascaded E - PHEMT transistor（ATF541M4） and single supply model, the matching circuits is optimized with the simulation software ADS. Finally, with the simulation of S parameters and harmonic balance, the LNA exhibits operating bandwidth with 2.7 - 3.1 GHz, noise figure less than O. 6 dB, inband gain more than 30 dB, gain flatness less than ＋1dB ,VSWR less than 1.6 dB,input P1dB more than -15 dBm. The simulation result shows that the design meets the performance requirements.
出处
《电讯技术》
北大核心
2009年第4期58-61,共4页
Telecommunication Engineering
关键词
宽带低噪声放大器
噪声系数
ADS仿真
优化设计
broadband low noise amplifier（LNA）
noise figure
ADS simulation
optimization design
