摘要
采用差温生长法制备了1.55μmInP/InGaAsP/InP双异质结激光晶片.差温生长法是在高温(约626℃)状态下生长InGaAsP有源层;然后降低温度,在低温(约600℃)状态下生长P-InP上限制层.此方法有效地解决了这种结构长波区(λ>1.45μm)的回熔问题,并克服了其他方法的缺点.
Differential temperature growth, a new LPE method, is used to prepare 1 55 μm InP/InGaAsP/InP double heterostructure laser wafer InGaAsP active layer and P InP upper confining layer are grown respectively at high temperature( ̄626℃) and low temperature ( ̄600℃) It can effectively solve the melt back problem of longer wavelength range ( λ >1 45 μm) of this structure and overcomes the weakness of other methods
出处
《大连理工大学学报》
CAS
CSCD
北大核心
1998年第3期270-272,共3页
Journal of Dalian University of Technology
基金
"八六三"国家高技术项目
关键词
半导体激光器
差温生长法
激光晶片
semiconductor lasers
wafers/melt back
InP/InGaAsP/InPdifferential temperature growth