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ZnO:Al透明导电薄膜的制备及其光电性能的研究 被引量：2

Optical and Electrical Properties of Al-doped ZnO Films Prepared Sol-gel Technique
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摘要 利用溶胶-凝胶法在石英衬底上制备Al3+掺杂ZnO薄膜,研究了Al3+掺杂对ZnO薄膜微结构和光学性能的影响.XRD测量结果表明,Zn1-xAlxO薄膜具有六角纤锌矿结构,晶格常数随着Al掺杂浓度的增加而减小;紫外-可见透射光谱(UV)表明,所有薄膜在可见光区的透过率均超过80%;光致发光谱研究发现,随着Al掺杂浓度的增加ZnO的吸收带边发生蓝移,XRD和光学性能研究都证实了ZnO薄膜中的Al3+是以替位式形式存在于晶格中. Al-doped ZnO polycrystalline films were deposited on quartz substrates by using a method of sol-gel technique. The properties of films were characterized by X-ray diffraction （XRD）, UV-transmittance spectroscopy and photoluminecent spectra （PL）. XRD reveals that the prepared films possess a polycrystalline hexagonal wurtzite crystal structure. All films show transmittance above 80% in the visible region from 400 to 800 nm at room temperature and the near band edge （NBE） of ZnO shifts to lower energy with increasing Al concentration, indicating Al3＋ ions incorporate into ZnO lattice as substitution.
作者 林应斌 吴丽平 林銮 黄树铃 李钻钻 杨艳敏 黄志高
机构地区 福建师范大学物理与光电信息科技学院
出处 《福建师范大学学报（自然科学版）》 CAS CSCD 北大核心 2009年第3期58-60,共3页 Journal of Fujian Normal University：Natural Science Edition
基金 国家自然科学基金资助项目(60876069) 福建省青年人才基金项目(2008F3039) 福建省高分子材料重点实验室开放课题(200801) 福建师范大学本科生课外科技计划立项资助项目(BKL2008-009)
关键词 溶胶-凝胶 ZnO 透射光谱 光致发光 sol-gel ZnO transmittance photoluminecent spectra
分类号 O482.3 [理学—固体物理]
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参考文献8

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同被引文献21

  • 1陆峰,徐成海,闻立时,曹洪涛,裴志亮,孙超.透明导电薄膜在不同衬底上的性能对比研究[J].材料保护,2005,38(7):5-7. 被引量：3
  • 2李素敏,赵玉涛,张钊.磁控溅射制备柔性衬底ZnO：Ga透明导电膜微结构及性能研究[J].太阳能学报,2007,28(11):1233-1238. 被引量：8
  • 3Kashiwaba Y, Suqawara K, et al. Characteristics of c-axis o- riented large grain ZnO films prepared by low-pressure MO- CVD method [J]. Thin Solid Films,2002,411(1) :87.
  • 4Hideaki A, Akio S, Tatsuhiko M, et al. Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition[J]. Thin Solid Films, 2002,407:86.
  • 5Zhao L, Lian J S, Liu Y, et al. Structural andoptical pro- perties of nano structured ZnO thin films deposited on quartz glass[J]. Appl Surf Sci, 2006,252 :8451.
  • 6Tsuijino J, Homma N, Sugawara T, et al. Preparation of Al-doped ZnO thin films by RF hermal plasma evaporation [J]. Thin Solid Films, 2002,407 : 86.
  • 7徐伟.Al掺杂ZnO透明导电薄膜的制备及性能研究[D].武汉:华中科技大学,2009.
  • 8Igsaki Y, et al. Argon gas pressure dependence of the proper- ties of transparent conducting ZnO :A1 films deposited on- glass substrates [J]. Appl Surf Sci,2001,169-170:508.
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  • 10Pearton S J, Norton D P, Ip K,et al . Recent advances in processing of ZnO [ J]. J Vac Sci Technol B, 2004, 22 (3) : 932 - 948.

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福建师范大学学报（自然科学版）
2009年 第3期

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