摘要
用背散射电子衍射分析技术研究铸造多晶硅锭切片的晶体学特征。结果表明:多晶硅锭晶体内部几乎没有取向差,取向差主要存在于晶界处;多晶硅锭切片中的大部分晶界为大角度晶界,且以Σ3为主,同时还存在少量小角度晶界。多晶硅制作太阳能电池转换率低可能与Σ3所占比例过高有关。
The grain boundary character in polycrystalline silicon ingot was studied by electron back scattered diffraction （EBSD）. The results showed that there was nearly no misorientation in a crystal. The misorientation was mainly in grain boundaries of polycrystalline silicon ingot. Most grain boundaries were observed with large angle grain boundaries. ∑3 was the chief of these large angle grain boundaries. Small angle grain boundaries were also observed with a low ratio. Low efficiency solar ceils by polycrystalline silicon ingot might be related to high ratio of ∑3 .
出处
《材料工程》
EI
CAS
CSCD
北大核心
2009年第5期11-13,共3页
Journal of Materials Engineering
基金
南昌航空大学科研基金资助项目(EC200703025)
关键词
多晶硅锭片
EBSD
取向差
晶界
Σ3
polycrystalline silicon
EBSD
misorientation
grain boundary
∑3
