摘要
在"强光一号"加速器上,对两种CMOS反相器和一种CMOS存储器进行了长脉冲状态和短脉冲状态下的辐照实验,测量了CMOS电路的瞬时辐照效应规律,得到了CMOS电路辐射损伤阈值与脉冲宽度的关系,分析了CMOS电路在不同脉冲宽度下的效应差异。实验结果表明:CMOS电路的辐射损伤阈值随脉冲宽度的增加而降低,在20 ns的脉冲宽度辐照下,CMOS反相器4007和4069的闩锁阈值大约为150 ns脉冲辐照下的2倍,CMOS存储器6264的翻转阈值在20 ns脉冲宽度辐照下为150 ns脉冲宽度辐照下的3倍。
Transient radiation response on CMOS circuits were investigated for different pulse widths. CMOS circuits 4007, 4069 and 6264 were irradiated using ＂Qiangguang-I＂ accelerator source. Latchup thresholds of CMOS inverters and upset level of CMOS SRAM with different pulse widths were obtained. The data clearly indicate dose-rate dependency on the pulse widths. The latchup threshold for 4007 and 4069 at 20 ns pulse width is 2 times that at 150 ns. The upset level for 6264 at 20 ns pulse width is 3 times that at 150 ns. The results show that the damage thresholds decrease with the increase of pulse widths.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2009年第5期742-744,共3页
High Power Laser and Particle Beams
基金
国防科技基础研究基金资助课题
